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COREBAI Microelectronic...
|
CBM94AD67 |
1Mb/13P |
Product parameters |
Shanghai Leiditech Elec...
|
NSP120 |
904Kb/8P |
Common Parameters |
Roithner LaserTechnik G...
|
RLDH660-40-3 |
101Kb/1P |
main technical parameters |
RLDH808-1200-5 |
45Kb/1P |
main technical parameters |
RLLH635-4-3 |
107Kb/1P |
main technical parameters |
RLLI635-2.5-3 |
80Kb/1P |
main technical parameters |
RLDE405-12-6 |
115Kb/1P |
main technical parameters |
RLDH650-24-3 |
70Kb/1P |
main technical parameters |
RLDC650-2.2-3 |
155Kb/1P |
main thchnical parameters |
RLDB808-500-5 |
125Kb/1P |
main technical parameters |
RLDD532-10-3 |
150Kb/1P |
main technical parameters |
RF Micro Devices
|
VCO-110 |
138Kb/1P |
Nominal Operating Parameters |
VCO-111 |
137Kb/1P |
Nominal Operating Parameters |
VCO-118 |
137Kb/1P |
Nominal Operating Parameters |
Roithner LaserTechnik G...
|
RLDC635-2.2-3 |
178Kb/1P |
main technical parameters |
Samsung semiconductor
|
MR16R1622DF0 |
442Kb/16P |
Key Timing Parameters |
Roithner LaserTechnik G...
|
RLDH830-3-3 |
115Kb/1P |
main technical parameters |
RLDB808-350-3 |
106Kb/1P |
main technical parameters |
RF Micro Devices
|
VCO-112 |
137Kb/1P |
Nominal Operating Parameters |
Samsung semiconductor
|
MR18R1624GEG0 |
442Kb/16P |
Key Timing Parameters |